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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| NEZ5964-8D | NEC Electronics Group | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | - | |||||
| NEZ5964-4DD | NEC Electronics Group | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | - | |||||
| AD | FGAF20N60SMD | Onsemi | IGBT/MOSFET驱动器,Insulated Gate Bipolar Transistor, 40A, 600V, N-Channel | |||||
| NEZ5964-15DD | NEC Electronics Group | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | - | |||||
| MC-5964 | NEC Electronics Group | Wide Band Medium Power Amplifier, 872MHz Min, 905MHz Max, | - | |||||
| NEZ5964-8DD | NEC Electronics Group | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | - | |||||
| NEZ5964-15D | NEC Electronics Group | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | - | |||||
| MC-5964-E1 | NEC Electronics Group | Wide Band Medium Power Amplifier, 872MHz Min, 905MHz Max, | - | |||||
| NEZ5964-4D | NEC Electronics Group | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | - | |||||
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